MRF6S27050HR3 MRF6S27050HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
?25
?5
?10
?15
?20
2660
2680
2700
2500
2520
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier W-CDMA Broadband Performance
@ Pout
= 7 Watts Avg.
VDD= 28 Vdc, Pout
= 7 W (Avg.), I
DQ
= 500 mA
Single?Carrier W?CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
20
2540
2560
2580
2600
2620
2640
11
19
18
17
16
15
14
13
12
?70
24
23
22
21
?40
?50
?60
η
D
, DRAIN
EFFICIENCY (%)
ηD
ALT1
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
?25
?5
?10
?15
?20
2660
2680
2700
2500
2520
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single-Carrier W-CDMA Broadband Performance
@ Pout
= 14 Watts Avg.
VDD= 28 Vdc, Pout
= 14 W (Avg.)
IDQ
= 500 mA, Single?Carrier W?CDMA
3.84 MHz Channel Bandwidth
30
PAR = 8.5 dB @ 0.01% Probability (CCDF)
2540
2560
2580
2600
2620
2640
11
19
18
17
16
15
14
13
12
?60
34
33
32
31
?30
?40
?50
η
D
, DRAIN
EFFICIENCY (%)
ηD
ALT1
Figure 5. Two-Tone Power Gain versus
Output Power
12
20
1
IDQ
= 1000 mA
Pout, OUTPUT POWER (WATTS) PEP
VDD
= 28 Vdc
f1 = 2598.75 MHz, f2 = 2601.25 MHz
Two?Tone Measurements
125 mA
18
17
16
10 100
G
ps
, POWER GAIN (dB)
Figure 6. Third Order Intermodulation Distortion
versus Output Power
?45
?15
0.5
IDQ
= 125 mA
Pout, OUTPUT POWER (WATTS) PEP
10
?20
?25
?30
?35
?40
100
?55
?50
VDD
= 28 Vdc, f1 = 2598.75 MHz, f2 = 2601.25 MHz
Two?Tone Measurements
1
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
750 mA
500 mA
250 mA
19
15
14
13
750 mA
500 mA
250 mA
1000 mA
相关PDF资料
MRF6S27085HSR5 MOSFET RF N-CHAN 28V 20W NI-780S
MRF6S9045NR1 MOSFET RF N-CH 28V 10W TO-270-2
MRF6S9060NR1 MOSFET RF N-CH 28V 14W TO-270-2
MRF6S9125MR1 MOSFET RF N-CH 28V 27W TO-270-4
MRF6S9125NR1 MOSFET RF N-CH 28V 27W TO-270-4
MRF6S9130HSR5 MOSFET RF N-CHAN 28V 27W NI-780S
MRF6S9160HSR5 MOSFET RF N-CHAN 28V 35W NI-780S
MRF6V10010NR4 MOSFET RF N-CHAN PLD-1.5
相关代理商/技术参数
MRF6S27085HR3 功能描述:射频MOSFET电源晶体管 HV6 2700MHZ NCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S27085HR3_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S27085HR3_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S27085HR5 功能描述:射频MOSFET电源晶体管 HV6 2700MHZ NCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S27085HS 制造商:Freescale Semiconductor 功能描述:
MRF6S27085HSR3 功能描述:射频MOSFET电源晶体管 HV6 2700MHZ NCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S27085HSR5 功能描述:射频MOSFET电源晶体管 HV6 2700MHZ NCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S9045 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors